RPI-0129 photointerrupter, ultraminiature smd type applications dsc(digital steal camera) dvc(digital video camera) digital handy phone features 1) ultraminiature smd type. 2) gap 1.2mm. absolute maximum ratings (ta = 25 c) electrical and optical characteristics (ta = 25 c) electrical and optical characteristics curves fig.1 relative output current vs. distance ( ) distance : d (mm) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 2.5 relative collector current : ic (%) fig.4 relative output current vs. distance ( ) fig.2 forward current falloff ? 20 0 20 40 60 80 100 10 50 40 30 20 0 ambient temperature : ta ( c) forward current : i f ( ma ) fig.6 relative output vs. ambient temperature relative collector current : ic ( % ) ambient temperature : ta ( c) ? 25 0 25 50 75 100 100 80 60 40 20 0 v ce = 5v i f = 20ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 di s tan ce : d ( m m) relative collector current : ic (%) d fig.3 forward current vs. forward voltage forward current : i f ( ma) forward voltage : v f ( v) 0 10 20 30 40 50 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 75 c 50 c 25 c 0 c ? 25 c fig.5 power dissipation / collector power dissipation vs. ambient temperature power dissipation / collector power dissiption : p d /p c (mw) ambient temperature : ta ( c) ? 20 0 40 60 80 20 100 0 20 40 60 80 100 120 p d p c parameter cut-off frequency ? non-coherent infrared light emitting diode used. peak light emitting wavelength rise time fall time symbol v f i r i ceo p p i c f c v ce(sat) tr tf min. ? ? ? ? 0.95 ? ? typ. 1.3 ? ? 800 ? ? 10 max. 1.6 10 0.5 ? 4.95 0.4 ? unit vi f = 50ma i f = 50ma v r = 5v v ce = 10v ? ? v ce = 5v, i f = 20ma i f = 20ma, i c = 0.1ma v cc = 5v, i f = 20ma, r l = 100 a a nm ma v s ? 10 ? s ? 1 ? mhz ? 950 ? nm conditions maximum sensitivity wavelength p ? 800 ? nm ? this product is not designed to be protected against electromagnetic wave. v cc = 5v, i c = 1ma, r l = 100 tr tf response time ? 10 ? s forward voltage reverse current dark current peak sensitivity wavelength collector current collector-emitter saturation voltage response time input charac- teristics output charac- teristics transfer characteristics photo transistor infrared light emitter diode d parameter symbol i c v ceo p d v r i f p c v eco topr tstg limits ? 25 to + 85 ? 30 to + 85 50 5 80 30 4.5 30 80 unit ma v mw v v ma mw c c forward current reverse voltage power dissipation collector-emitter voltage emitter-collector voltage collector current collector power dissipation operating temperature storage temperature input (led) output photo- transistor ( )
delay time rise time (time for output current to rise from 10% to 90% of peak current) fall time (time for output current to fall from 90% to 10% of peak current) t d : t r : t f : fig.11 response time measurement circuit t d t r t f 10% 90% r l v cc input input output output collector current : i c (ma) collector to emitter voltage: v ce (v) fig.10 output characteristics 48 610 2 0 0 2 1 3 4 5 6 7 i f =30ma 25ma 20ma 15ma 10ma 5ma fig.8 response time vs. collector current collector current : i c (ma) 10 0.05 0.1 1 1 10 100 response time : t r ( s) r l =100 r l =1k r l =500 fig.9 dark current vs. ambient temperature ambient temperature : ta ( c ) dark current : i ceo (na) 0 25 50 75 100 ? 25 0.1 1 10 100 1000 v ce = 20v v ce = 10v v ce = 30v fig.7 collector current vs. forward current collector current : i c (ma) forward current : i f (ma) 0 5 10 15 20 25 0 1 2 3 4 5 2010.04 rev.a dimensions (unit : mm) notes: 1. unspecified tolerance shall be 0.2 . 2. dimension in parenthesis are show for reference. 1. 2 3. 6 c0. 2 (4-0.2) 2-r0. 3 0. 5 2. 2 2. 8 1. 6 2. 6 c0. 4 (4-0.3) (4-0.6) (2-0.2) (2-0.1) opti cal center internal connecti on diagram ( 1. 60 ) ( 2. 35 ) (1.28) (0.05) (2.90) 3. 3 1. 0 (0.75) 0. 15 c0 . 4 (0.3) (0.7) collecter anode emitter cathode
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